Magnetic Read Head with MR Enhancements

ABSTRACT

A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.

BACKGROUND

1. Technical Field

This disclosure relates generally to thin-film magnetoresistive readsensors and particularly to the enhancement of the magnetoresistiveproperties of such sensors by the insertion of additional layers.

2. Description

In simplest form, the usual giant magnetoresistive (GMR) read sensorconsists of two magnetic layers, formed vertically above each other in aparallel planar configuration and separated by a conducting, butnon-magnetic, spacer layer. Each magnetic layer is given aunidirectional magnetic moment within its plane and the relativeorientations of the two planar magnetic moments determines theelectrical resistance that is experienced by a current that passes frommagnetic layer to magnetic layer through the spacer layer. The physicalbasis for the GMR effect is the fact that the conduction electrons arespin polarized by interaction with the magnetic moments of themagnetized layers. This polarization, in turn, affects their scatteringproperties within the layers and, consequently, results in changes inthe resistance of the layered configuration. In effect, theconfiguration is a variable resistor that is controlled by the anglebetween the magnetizations.

The magnetic tunneling junction device (TMR device) is an alternativeform of GMR sensor in which the relative orientation of the magneticmoments in the upper and lower magnetized layers controls the flow ofspin-polarized electrons tunneling through a very thin dielectric layer(the tunneling barrier layer) formed between those magnetized layers.When injected electrons pass through the upper layer, as in the GMRdevice, they are spin polarized by interaction with the magnetizationdirection (direction of its magnetic moment) of that layer. Theprobability of such an electron then tunneling through the interveningtunneling barrier layer into the lower magnetic layer then depends onthe availability of states within the lower layer that the tunnelingelectron can occupy. This number, in turn, depends on the magnetizationdirection of the lower layer. The tunneling probability is thereby spindependent and the magnitude of the current (tunneling probabilitymultiplied by the number of electrons impinging on the barrier layer)depends upon the relative orientation of the magnetizations of magneticlayers above and below the barrier layer.

In what is called a spin-valve configuration, one of the two magneticlayers in both the GMR and TMR has its magnetization fixed in spatialdirection (the pinned layer), while the other layer (the free layer) hasits magnetization free to move in response to an external magneticstimulus. If the magnetization of the free layer is allowed to movecontinuously, as when it is acted on by a continuously varying externalmagnetic field, the GMR and TMR device each effectively acts as avariable resistor and it can be used as a read-head in a hard diskdrive. If the magnetization of the free layer is only permitted to takeon two orientations, parallel and antiparallel to that of the pinnedlayer, then the device can be used to store information (eg. 0 or 1,corresponding to the free layer magnetization orientation) as an MRAMcell.

The difference in operation between the GMR sensor and the TMR sensor,is that the resistance variations in the former are a direct result ofchanges in the electrical resistance (due to spin polarized electronscattering) within the three-layer configuration (magneticlayer/non-magnetic conducting layer/magnetic layer), whereas in the TMRsensor, the amount of current is controlled by the availability ofstates for electrons that tunnel through the dielectric barrier layerthat is formed between the free and pinned layers.

When the TMR configuration is used as a sensor or read head, (called aTMR read head, or “tunneling magnetoresistive” read head) the free layermagnetization is required to move about a central bias position by theinfluence of the external magnetic fields of a recorded medium, such asis produced by a moving hard disk or tape. As the free layermagnetization varies in direction, a sense current passing between theupper and lower electrodes and tunneling through the dielectric barrierlayer varies in magnitude as more or less electron states becomeavailable. Thus a varying voltage appears across the electrodes (whichmay be the magnetic layers themselves). This voltage, in turn, isinterpreted by external circuitry and converted into a representation ofthe information stored in the medium.

A typical bottom spin valve GMR sensor structure is the following:Seed/AFM/outer pinned (AP2)/Ru/inner pinned (AP1)/Cu/Free Layer/CappingLayer.

A typical bottom spin valve TMR sensor structure is the following:Seed/AFM/outer pinned (AP2)/Ru/inner pinned AP1)/MgO/Free Layer/CappingLayer,

In the TMR configuration shown above (and in the CPP GMR as well), theseed layer is an underlayer required to form subsequent high qualitymagnetic layers. The AFM (antiferromagnetic layer) is required to pinthe pinned layer, ie., to fix the direction of its magnetic moment byexchange coupling. The pinned layer itself is now most often a syntheticantiferromagnetic (SyAF) (also termed a synthetic antiparallel (SyAP))structure with zero total magnetic moment. This structure is achieved byforming an antiferromagnetically coupled tri-layer whose configurationis denoted herein as “outer pinned (AP2)/Ru/inner pinned (AP1)”, whichis to say that two ferromagnetic layers, the outer (farthest from thefree layer) and inner (closest to the free layer) pinned layers whichare denoted AP2 and AP1 respectively, are magnetically coupled across aRu spacer layer in such a way that their respective magnetic moments aremutually antiparallel and substantially cancel each other. The structureand function of such SyAP structures is well known in the art and willnot be discussed in further detail herein.

In the GMR sensor (i.e., used as a read head) there is an electricallyconducting but non-magnetic spacer layer (typically of Cu) thatseparates the free and pinned layers. This conducting, but non-magneticCu spacer layer in the GMR is replaced in the TMR by a thin insulating(dielectric) layer of (for example) oxidized magnesium (MgO) that can beoxidized in any of several different ways to produce an effectivedielectric tunneling barrier layer. The free layer in both the GMR andTMR is usually a bilayer of ferromagnetic material such as CoFeB/NiFe,and the capping layer in both the GMR and TMR is typically a layer oftantalum (Ta). The bilayer choice for the free layer is stronglysuggested by the fact that an effective free layer should bemagnetically soft (of low coercivity), which is an attribute of theCoFeB layer. The CoFeB layer, however, exhibits excessivemagnetostriction. By adding the NiFe layer, the magnetostriction isreduced, but unfortunately, the TMR ratio, dR/R, (ratio of maximumresistance variation as the free layer magnetic moment changesdirection, dR, to total device resistance, R), which is a measure of itsefficacy as a read sensor (or MRAM element), will also be reduced. Weshall see below that the structure of the free layer can besignificantly altered to provide an improved TMR sensor or MRAM elementas well as a GMR sensor or MRAM element. We note that the verticalpositioning of the free and pinned layers may be reversed, to formeither what are called “bottom spin valves” (as shown here) and,alternatively “top spin valves” with the free layer formed on the seedlayer and the pinned layer vertically above the free layer.

Much recent experimentation on GMR sensors has been directed atimprovements in the free layer structure. The most common structure inboth the GMR and TMR sensor had been a CoFeB/NiFe bilayer, in which theNiFe layer provides the low magnetostriction, while the CoFeB providesgood magnetic softness. More recently, attempts have been made toimprove the magnetic properties of both free and pinned layers byutilizing novel materials and laminated structures. Examples of suchattempts, which differ from and do not achieve the results of thepresent disclosure, are to be found in:

-   U.S. Pat. No. 7,672,088 (Zhang et al), which is assigned to the    present assignee.-   U.S. Pat. No. 8,008,231 (Nishimura et al.)-   U.S. Pat. No. 8,085,511 (Yuasa et al.)

SUMMARY

An object of this disclosure is to form a (top or bottom spin valve) TMR(or, alternatively, a GMR) sensor or a TMR or GMR MRAM element thatcombines a high TMR or GMR ratio and a low free layer coercivity whileretaining other advantageous properties.

An additional object of this invention is to provide such devices inwhich B atom interdiffusion from a CoFeB electrode layer (the magneticlayer into which electrons are injected or from which they are removed),in either AP1 or the free layer, is contained.

Still a further object of this invention is to provide such devices inwhich Ni atom interdiffusion is contained and NiFe crystalline growth isblocked, for a NiFe electrode layer in the free layer.

These objects will be met by either a top or bottom spin valve GMR orTMR sensor or MRAM element, but with emphasis herein being on thedescription of a TMR sensor, in which there is formed a free layer orpinned layer (AP1) in which there are inserted thin (1-10 angstroms)iron (Fe) layers or iron rich layers of the alloy FeX, where X is atleast one of the non-magnetic, metallic elements Ta, Hf, V, Co, Mo, Zr,Nb or Ti, combined with the Fe in amounts less than 50% by atomicpercent, or, equivalently, with the Fe atom percent being at least 50%.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic representation of an ABS view of a typical MTJsensor that is patterned, biased longitudinally and shielded.

FIG. 2 is a schematic representation of the MTJ TMR stack in the sensorof FIG. 1, showing the layer structure in greater detail.

FIG. 3 is a schematic representation of a MTJ TMR stack similar to thatof FIG. 2, except that layers of Fe and/or FeX alloys have been insertedin positions where they will achieve the objects of this disclosure.

DETAILED DESCRIPTION

The present disclosure is a (top or bottom spin valve) TMR (or GMR)stack from which is formed a sensor or MRAM structure of good arealresistance, good free layer coercivity and improved magnetoresistive(MR) ratio (dR/R), provided by the insertion of thin layers of Fe oriron-rich alloys of FeX into the free layer and/or the pinned layerstructures. The inserted layers are characterized as having an atompercent of Fe of at least 50%, and where X is chosen from one or severalof the non-magnetic metallic elements Ta, Hf, V, Co, Mo, Zr, Nb or Ti.

The improvement in performance is obtained by introducing these layersat positions within the stack where they can contain (or constrain) theinterdiffusion of B from a CoFeB layer formed as an element of the freeor pinned layers and/or contain (or constrain) the interdiffusion of Nifrom an NiFe layer or halt the crystallization of the NiFe layer, wherethat NiFe layer is formed as an element of the free layer. The Fe or FeXlayers are formed to a thickness between approximately 1 and 10angstroms, with the approximate range between 2 and 5 angstroms beingpreferable. It is noted that these performance improvements will accrueto both TMR sensors (e.g. read elements having a variable free layermagnetic moment) and to TMR MRAM elements (having essentially abi-stable, bi-directional free layer magnetic moment that is maintainedby layer anisotropy) and can also be effective in improving theperformance of GMR sensor and MRAM elements. In addition, the structurescan equally well be of the bottom or top configurations where thevertical positions of free and pinned layers are essentiallyinterchanged.

To improve the TMR ratio of the current MTJ devices with MgO barrierlayer as shown in FIGS. 1 and 2, it is important to improve the latticematching between the AP1 layer of the bottom magnetic electrode (theSyAF pinned layer), and/or the top magnetic electrode (the free layer)with the MgO barrier layer. Also there is a need to improve the growthconditions of the AP1 layer, the MgO barrier layer and the free layerdepositions. It is well known that Fe or Fe-rich FeX alloy (X=at leastone from Ta, Hf, V, Co, Mo, Zr, Nb, Ti etc) with doping with X materialof less than 50% has a much better wetting with the MgO barrierscompared with Co or Co-rich alloys; also, such Fe or FeX alloys have amuch smaller lattice mismatch with the MgO barrier. Therefore, with sucha thin Fe layer or FeX alloy layer insertion in AP1 and/or the freelayer, MR enhancement is expected. A picture of such an improved TMRstack is illustrated in FIG. 3 and will be discussed below.

Referring first to FIG. 1, there is shown a schematic ABS view of apatterned, biased and shielded typical MTJ (magnetic tunneling junction)sensor such as might be used to read recorded magnetic data. With onlyminor changes, the illustration can be applied as well to an MTJ MRAMelement or a GMR sensor or MRAM element, the MRAM being used to storebinary data. In what follows, we will denote the as-depositedconfiguration of layers as the “stack.” Once the stack is patterned andmagnetized appropriately (either in vertical cross-section and/orhorizontal cross-section) and provided with shields and biasing layers,it will become either a sensor (i.e. a read sensor) or an MRAM element.

The patterned sensor stack (10), which is shown here as being athin-film TMR (tunneling magneto-resistive) stack, is laterally abuttedby longitudinal biasing layers (20), usually formed of a hard magneticmaterial, and separated from the stack itself by an insulating layer(30). The patterned stack is formed between an upper shield (40) and alower shield (50) that shields it from extraneous magnetic fields. It isunderstood that the arrangement of the shields would be different if thestack were formed as an MRAM element. At the approximate center(vertically) of the stack is found the defining tunneling barrier layer(60), which controls the flow of polarized electrons throughquantum-mechanical tunneling and the availability of states for theelectrons.

Referring next to FIG. 2, there is shown, schematically, an isolated andmore detailed illustration of the stack (10) of FIG. 1. In this figurethere is shown a lower layer (100) which includes a seed layer (105), anantiferromagnetic (AFM) pinning layer (107) and layer AP2 (109) of anantiferromagnetically (antiparallel magnetic moments) coupled pinnedlayer, symbolized SyAP hereinafter. AP2 is typically a layer offerromagnetic material.

Formed on lower layer (100) there is shown a coupling layer (110), hereformed of Ru, which provides an antiferromagnetic coupling between layerAP2 (109) and another ferromagnetic layer, AP1 (120), formed immediatelyabove it and contiguous with it.

Formed on the coupling layer (110), there is the abovementioned secondferromagnetic layer, denoted AP1 (120), which together with AP2 and theintermediate coupling layer, forms a tri-layer that behaves as asynthetic antiferromagnetic structure (denoted SyAP). Layer AP1 is alsocalled a reference layer because the direction of its fixed magneticmoment provides a fixed reference line with which the free magneticmoment of the free layer to forms an angle.

Formed on AP1 (120) there is the tunneling barrier layer (60), typicallya layer of MgO, which is a thin non-conducting layer. Quantummechanically, even though the layer is classically non-conducting, aperpendicular flow of electrons can nevertheless pass through thisbarrier layer with a certain probability that depends on the spindirection of the electrons and the magnetization direction of AP1. Ifthe structure were a GMR rather than a TMR, the barrier layer would bereplaced by a non-magnetic, electrically conducting spacer layer, suchas a layer of Cu, through which electrons can pass.

Formed on the tunneling barrier layer (60) there is magnetically freelayer (140) of ferromagnetic material, it being “free” in the sense thatits magnetic moment if free to move under the influence of externalmagnetic fields.

Finally, formed on the free layer (140) is a capping layer (150),typically a layer of Ta, which serves several purposes, including toprotect the stack during processing and to provide a good electricalcontact for the current.

Referring finally to FIG. 3, there is shown, schematically, the stack(10) of FIG. 2 in which there has been inserted the Fe and FeX layers ofthis disclosure ((115) and (145)). In this figure there is shown a lowerlayer configuration (100) which includes a seed layer (105), anantiferromagnetic (AFM) pinning layer (107) and the ferromagnetic layerAP2 (109) portion of an antiferromagnetically coupled pinned layer. AP2is typically a layer of ferromagnetic material such as CoFe with Fepercent >20%, or laminations of CoFe(y %)/FeCo(z %)/CoFe(y %), with y%>5% and z %<50%. Furthermore, ferromagnetic layers AP1 and theferromagnetic free layer, are typically formed as layers of CoFeB andCoFe and, in the free layer only, there is also a layer of NiFe. Asmentioned above, these alloys enable the ferromagnetic free layer tohave both the softness (low coercivity) of the CoFeB and the lowmagnetostriction of the NiFe. Note, however that NiFe is not preferredas a component of AP1 because of adverse effects on the pinning fieldsand reduction of the MR ratio.

Formed on lower layer configuration (100), there is shown a couplinglayer (110), here formed of Ru, which provides an antiferromagneticcoupling between layer AP2 (109) and layer AP1 (120) formed immediatelyabove it and contiguous with it.

Formed on the coupling layer (110), there is a second ferromagneticlayer, denoted AP1 (120), which together with AP2 and the intermediatecoupling layer, forms a tri-layer that behaves as a syntheticantiferromagnetic structure (denoted SyAP). Layer AP1 is called areference layer because the direction of its fixed magnetic momentprovides a fixed reference line with which the free magnetic moment ofthe free layer to forms an angle. Unlike the corresponding AP1 layer ofFIG. 2, there is formed in the present AP1 layer an inserted layer (115)of Fe or FeX alloys. Although only a single insertion layer is shown forsimplicity, multiple layers are possible, with the multiple layers(laminations) being all of the same alloy composition, or being avariety of such compositions, each of the form Fe or FeX, with X beingone or more of the non-magnetic, metallic elements Ta, Hf, V, Co, Mo,Zr, Nb or Ti and where the atom percentage of X is less than 50% so thatthe layer is iron-rich. Thus, in an AP1 layer formed with laminates ofCoFeB/CoFe, the layer with the final multiple insertions could have theform:

CoFe/FeX₁/CoFe/CoFeB/FeX₂/CoFe,

Where X₁ could be Ta, X₂ could be Hf or the FeX could be just Fe itself.

The insertion layer (each insertion layer if more than one is present)has a thickness of between approximately 1 and 10 angstroms with between2 and 5 angstroms being preferred.

Formed on AP1 (120) there is a tunneling barrier layer (130), typicallya layer of MgO, which is a thin non-conducting layer. Quantummechanically, a perpendicular flow of electrons can pass through thisbarrier layer with a certain probability that depends on the spindirection of the electrons and the magnetization direction of AP1.

Formed on the tunneling barrier layer (130) there is the magneticallyfree layer (140) of ferromagnetic material, it being “free” in the sensethat its magnetic moment if free to move under the influence of externalmagnetic fields. Unlike the magnetically free layer of FIG. 2, however,this free layer includes a multiplicity (only one being shown here) ofinsertion layers (145) of the form Fe or FeX, where X is Ta, Hf, V, Co,Mo, Zr, Nb or Ti and where the atom percentage of X is less than 50% sothat the layer is iron-rich. Each insertion layer has a thickness ofbetween approximately 1 and 10 angstroms with between 2 and 5 angstromsbeing preferred.

Finally, formed on the free layer (140) is a capping layer (150),typically a layer of Ta, which serves several purposes, including toprotect the stack during processing and to provide a good electricalcontact for the current.

When the free layer and/or the AP1 layer comprise bilayer structures ofCoFeB, CoFe and, (for the free layer only), also NiFe, the insertionlayers are preferably located next to the NiFe portion of the free layerto constrain interdiffusion of the Ni atoms and to block NiFecrystalline growth and next to the CoFeB layer to constraininterdiffusion of the B atoms. The Fe layer and the FeX insertion layersare not preferred to be immediately adjacent to the MgO layer as the Feor FeX layer tends to attract some oxygen from the MgO. Note also thatfor the CoFeB/CoFe structure of the AP1 layer, it is preferred that theCoFe layer be immediately adjacent to the MgO layer. With the Fe or FeXinsertions, however, it is preferred to have the configurationCoFeB/FeX/CoFe or its laminations, with the CoFe layer deposited on top.For the free layer, it is preferred that the configuration:CoFe/CoFeB/NiFe, have NiFe on top and the CoFe on the bottom where it isclosest to the MgO layer. In the preferred structure of this disclosure,CoFeB should not be immediately adjacent to the MgO because ofinterdiffusion concerns. From a crystallinity perspective, it should bepointed out that the Fe or FeX layer insertion is directed at preventingB interdiffusion into the MgO tunneling barrier layer and, due to the Feor FeX BCC (body centered cubic) crystal structure it would prevent NiFeFCC (face centered cubic) structure crystallization intrusion towardsthe MgO layer. The NiFe layer is usually FCC structure and it the MRratio would be degraded should the MgO become FCC.

The fabrication process preferred for the (top or bottom) TMR (or GMR)sensor or MRAM element is advantageously similar to the processescurrently in use to produce such sensors or MRAM elements that do notinclude the insertion layers. Specifically, the layer stack would beformed with the chosen insertion layers deposited at their positionswithin the AP1 layer of the pinned layer and/or the free layer. Then thestack would be patterned and magnetized in accord with its ultimate useas a sensor or MRAM element, longitudinal biasing layers would beapplied and appropriate top and bottom shields would be formed asrequired.

As is understood by a person skilled in the art, the present descriptionis illustrative of the present disclosure rather than limiting of thepresent disclosure. Revisions and modifications may be made to methods,materials, structures and dimensions employed in forming and providing aTMR or GMR stack with enhanced MR properties incorporating insertionlayers of Fe or FeX in free and/or pinned layers, while still formingand providing such a structure and its method of formation in accordwith the spirit and scope of the present invention as defined by theappended claims.

What is claimed is:
 1. A TMR stack comprising: a seed layer; a pinninglayer formed on said seed layer; a synthetic antiparallel (SyAP) layerformed on said pinning layer and magnetically coupled thereto, whereinsaid SyAP layer is formed as an antiferromagnetically coupled pair offerromagnetic layers denoted by AP1 and AP2, said ferromagnetic layersbeing separated by a non-magnetic coupling layer, and wherein layer AP2is formed on said pinning layer; and wherein said AP1 layer incorporatesa first plurality of insertion layers of Fe or FeX or multiplelaminations of Fe or FeX wherein X is one or more of metallic,non-magnetic elements selected from Ta, Hf, V, Co, Mo, Zr, Nb or Ti andwherein a total atom percent of X is less than 50%; a tunneling barrierlayer formed on said AP1 layer; a ferromagnetic free layer formed onsaid tunneling barrier layer, said ferromagnetic free layer including asecond plurality of insertion layers of Fe or FeX or multiplelaminations of Fe or FeX wherein X is one or more of the metallic,non-magnetic elements selected from Ta, Hf, V, Co, Mo, Zr, Nb or Ti andwherein a total atom percent of X is less than 50%; and a capping layerformed on said ferromagnetic free layer.
 2. A TMR stack comprising: aseed layer; a pinning layer formed on said seed layer; a syntheticanti-parallel (SyAP) layer formed on said pinning layer and magneticallycoupled thereto, wherein said SyAP layer is formed as anantiferromagnetically coupled pair of ferromagnetic layers denoted byAP1 and AP2, said ferromagnetic layers being separated by a non-magneticcoupling layer, and wherein layer AP2 is formed on said pinning layer;and wherein said AP1 layer incorporates a plurality of insertion layersof Fe or FeX or multiple laminations of Fe or FeX wherein X is one ormore of the metallic, non-magnetic elements selected from Ta, Hf, V, Co,Mo, Zr, Nb or Ti and wherein a total atom percent of X is less than 50%;a tunneling barrier layer formed on said AP1 layer; and a ferromagneticfree layer formed on said tunneling barrier layer; and a capping layerformed on said ferromagnetic free layer.
 3. TMR stack comprising: a seedlayer; a pinning layer formed on said seed layer; a syntheticantiparallel (SyAP) layer formed on said pinning layer and magneticallycoupled thereto, wherein said SyAP layer is formed as anantiferromagnetically coupled pair of ferromagnetic layers denoted byAP1 and AP2, said ferromagnetic layers being separated by a non-magneticcoupling layer, and wherein layer AP2 is formed on said pinning layer; atunneling barrier layer formed on said AP1 layer; and a ferromagneticfree layer formed on said tunneling barrier layer, wherein saidferromagnetic free layer includes a plurality of insertion layers of Feor FeX or multiple laminations of Fe or FeX wherein X is one or more ofthe metallic, non-magnetic elements selected from Ta, Hf, V, Co, Mo, Zr,Nb or Ti and wherein a total atom percent of X is less than 50%; and acapping layer formed on said ferromagnetic free layer.
 4. GMR stackcomprising: a seed layer; a pinning layer formed on said seed layer; asynthetic antiparallel (SyAP) layer formed on said pinning layer andmagnetically coupled thereto, wherein said SyAP layer is formed as anantiferromagnetically coupled pair of ferromagnetic layers denoted byAP1 and AP2, said ferromagnetic layers being separated by a non-magneticcoupling layer, and wherein layer AP2 is formed on said pinning layer;and wherein said AP1 layer incorporates a first plurality of insertionlayers of Fe or FeX or multiple laminations of Fe or FeX wherein X isone or more of metallic, non-magnetic elements selected from Ta, Hf, V,Co, Mo, Zr, Nb or Ti and wherein a total atom percent of X is less than50%; an electrically conducting, non-magnetic spacer layer formed onsaid AP1 layer; a ferromagnetic free layer formed on said electricallyconducting, non-magnetic spacer layer, said ferromagnetic free layerincluding a second plurality of insertion layers of Fe or FeX ormultiple laminations of Fe or FeX wherein X is one or more of themetallic, non-magnetic elements selected from Ta, Hf, V, Co, Mo, Zr, Nbor Ti and wherein a total atom percent of X is less than 50%; and acapping layer formed on said ferromagnetic free layer.
 5. A GMR stackcomprising: a seed layer; a pinning layer formed on said seed layer; asynthetic antiparallel (SyAP) layer formed on said pinning layer andmagnetically coupled thereto, wherein said SyAP layer is formed as anantiferromagnetically coupled pair of ferromagnetic layers denoted byAP1 and AP2, said ferromagnetic layers being separated by a non-magneticcoupling layer, and wherein layer AP2 is formed on said pinning layer;and wherein said AP1 layer incorporates a plurality of insertion layersof Fe or FeX or multiple laminations of Fe or FeX wherein X is one ormore of the metallic, non-magnetic elements selected from Ta, Hf, V, Co,Mo, Zr, Nb or Ti and wherein a total atom percent of X is less than 50%;a non-magnetic, electrically conducting spacer layer formed on said AP1layer; and a ferromagnetic free layer formed on said tunneling barrierlayer; and a capping layer formed on said ferromagnetic free layer.
 6. AGMR stack comprising: a seed layer; a pinning layer formed on said seedlayer; a synthetic antiparallel (SyAP) layer formed on said pinninglayer and magnetically coupled thereto, wherein said SyAP layer isformed as an antiferromagnetically coupled pair of ferromagnetic layersdenoted by AP1 and AP2, said ferromagnetic layers being separated by anon-magnetic coupling layer, and wherein layer AP2 is formed on saidpinning layer; a non-magnetic electrically conducting spacer layerformed on said AP1 layer; and a ferromagnetic free layer formed on saidtunneling barrier layer, wherein said ferromagnetic free layer includesa plurality of insertion layers of Fe or FeX or multiple laminations ofFe or FeX wherein X is one or more of the metallic, non-magneticelements selected from Ta, Hf, V, Co, Mo, Zr, Nb or Ti and wherein atotal atom percent of X is less than 50%; and a capping layer formed onsaid ferromagnetic free layer. 7-12. (canceled)
 13. The TMR stack ofclaim 1 wherein said first and second plurality of insertion layers ofFe or FeX are formed to a thickness between approximately 1 angstrom and10 angstroms.
 14. The TMR stack of claim 2 wherein said plurality ofinsertion layers of Fe or FeX are formed to a thickness betweenapproximately 1 angstrom and 10 angstroms.
 15. The TMR stack of claim 3wherein said plurality of insertion layers of Fe or FeX are formed to athickness between approximately 1 angstrom and 10 angstroms.
 16. The GMRstack of claim 4 wherein said first and second plurality of insertionlayers of Fe or FeX are formed to a thickness between approximately 1angstrom and 10 angstroms.
 17. The GMR stack of claim 5 wherein saidplurality of insertion layers of Fe or FeX are formed to a thicknessbetween approximately 1 angstrom and 10 angstroms.
 18. The GMR stack ofclaim 6 wherein said plurality of insertion layers of Fe or FeX areformed to a thickness between approximately 1 angstrom and 10 angstroms.19. The TMR stack of claim 1 wherein said ferromagnetic free layer isformed as either of sequential layers of CoFeB/NiFe/Fe orCoFeB/NiFe/FeX, or combinations and/or multiples of CoFeB/NiFe/Fe orCoFeB/NiFe/FeX, and, whereby said insertion layer of Fe or FeX is notformed adjacent to said tunneling barrier layer and wherein saidinsertion layer constrains B interdiffusion and Ni interdiffusion andblock the crystallization of NiFe.
 20. The TMR stack of claim 1 whereinsaid ferromagnetic free layer comprises multi-layer structures ofFe/CoFeB/NiFe, or FeX/CoFe/NiFe, or CoFeB/NiFe/Fe or CoFeB/NiFe/FeX orCoFeB/Fe/NiFe or CoFeB/FeX/NiFe or combinations and multiples thereofand wherein said insertion layer of Fe or FeX is inserted adjacent tosaid NiFe layer to constrain Ni interdiffusion and to block thecrystallization of NiFe, or is inserted next to the CoFeB layer toconstrain interdiffusion of the B atoms.
 21. The TMR stack of claim 1wherein said AP1 layer includes a CoFeB/CoFe structure with the CoFelayer immediately adjacent to an MgO layer formed as said tunnelingbarrier layer and wherein said first plurality of Fe or FeX insertionlayers are not inserted immediately adjacent to said MgO layer to avoidthe extraction of O from the MgO.
 22. The TMR stack of claim 1 whereinsaid AP1 layer includes laminates of a form CoFeB/CoFe and wherein theCoFe layer is formed immediately adjacent to an MgO layer formed as saidtunneling barrier layer.
 23. The TMR stack of claim 1 wherein said AP1layer includes single or multiple structures of a form CoFeB/FeX/CoFe,or CoFeB/Fe/CoFe, or CoFeB/CoFe/Fe or CoFeB/CoFe/FeX with the CoFe layeror the CoFeB layer deposited immediately adjacent to an MgO layer formedas said tunneling barrier layer.
 24. The TMR stack of claim 1 whereinsaid second plurality of Fe or FeX insertion layers in said free layerprevent B interdiffusion into an MgO layer formed as said tunnelingbarrier layer and, as a result of BCC (body centered cubic) crystallinestructure of said second plurality of Fe or FeX insertion layers, FCC(face centered cubic) crystalline structure of said NiFe layer isprevented from intruding into the crystalline structure of said MgOlayer.
 25. The TMR stack of claim 1 wherein said first plurality ofinsertion layers of Fe or FeX in said AP1 layer or said second pluralityof Fe or FeX insertion layers in said free layer provide improvedwettability and lattice matching properties with an MgO layer formed assaid tunneling barrier layer, thereby improving sensor properties. 26.The TMR stack of claim 2 wherein said AP1 layer includes a CoFeB/CoFestructure with the CoFe layer immediately adjacent to an MgO layerformed as said tunneling barrier layer and wherein said plurality of Feor FeX insertion layers are not immediately adjacent to said MgO layer,formed as said tunneling barrier layer, to avoid the extraction of Ofrom the MgO.
 27. The TMR stack of claim 2 wherein said AP1 layerincludes laminates of a form CoFeB/CoFe and wherein the CoFe layer isformed immediately adjacent to an MgO layer formed as said tunnelingbarrier layer.
 28. The TMR stack of claim 2 wherein said AP1 layerincludes single or multiple structures of a form CoFeB/FeX/CoFe with theCoFe layer deposited proximate to an MgO layer formed as said tunnelingbarrier layer.
 29. The TMR stack of claim 2 wherein said plurality of Feor FeX insertion layers in said AP1 layer prevent B interdiffusion intoan MgO layer formed as said tunneling barrier layer and, as a result ofBCC (body centered cubic) crystalline structure of said plurality of Feor FeX insertion layers, FCC (face centered cubic) crystalline structureof said NiFe layer is prevented from intruding into the crystallinestructure of said MgO layer.
 30. The TMR stack of claim 2 wherein saidplurality of insertion layers of Fe or FeX in AP1 layer provide improvedwettability and lattice matching properties with an MgO layer formed assaid tunneling barrier layer, thereby improving sensor properties. 31.The TMR stack of claim 3 wherein said free layer is formed as either ofsequential layers of CoFeB/NiFe/Fe or CoFeB/NiFe/FeX or CoFeB/FeX/NiFeor CoFeB/Fe/NiFe, whereby said insertion layer of Fe or FeX is adjacentto said tunneling barrier layer and wherein said insertion layer of Feor FeX constrains B and Ni interdiffusion and blocks the crystallizationof NiFe.
 32. The TMR stack of claim 3 wherein said ferromagnetic freelayer comprises bilayer structures of CoFeB/NiFe, or CoFe/NiFe, andwherein said insertion layer of Fe or FeX is inserted adjacent to saidNiFe layer to constrain Ni interdiffusion and to block thecrystallization of NiFe, or is inserted next to the CoFeB layer toconstrain interdiffusion of the B atoms.
 33. The TMR stack of claim 3wherein said plurality of Fe or FeX insertion layers in said free layerprevent B interdiffusion into an MgO layer formed as said tunnelingbarrier layer and, as a result of BCC (body centered cubic) crystallinestructure of said first plurality of Fe or FeX insertion layers, FCC(face centered cubic) crystalline structure of said NiFe layer isprevented from intruding into the crystalline structure of said MgOlayer.
 34. The TMR stack of claim 3 wherein said insertion layers of Feor FeX in said free layer provide improved wettability and latticematching properties with an MgO layer formed as said tunneling barrierlayer, thereby improving sensor properties.
 35. The GMR stack of claim 4wherein said ferromagnetic free layer is formed as either of thesequential layers of CoFeB/NiFe/Fe or CoFeB/NiFe/FeX or CoFeB/FeX/NiFeor CoFeB/Fe/NiFe, whereby said insertion layer of Fe or FeX is adjacentto said electrically conducting non-magnetic spacer layer and whereinsaid insertion layer constrains B and Ni interdiffusion and blocks thecrystallization of NiFe.
 36. The GMR stack of claim 4 wherein saidferromagnetic free layer comprises the bilayer structures of CoFeB/NiFe,or CoFe/NiFe, and wherein said insertion layer of Fe or FeX selectedfrom said second plurality of insertion layers is inserted adjacent tosaid NiFe layer to constrain Ni interdiffusion and to block thecrystallization of NiFe, or is inserted next to the CoFeB layer toconstrain interdiffusion of the B atoms.
 37. The GMR stack of claim 5wherein said ferromagnetic free layer is formed as either of thesequential layers of CoFeB/NiFe/Fe or CoFeB/NiFe/FeX or CoFeB/FeX/NiFeor CoFeB/Fe/NiFe, whereby said insertion layer or Fe or FeX is adjacentto said electrically conducting non-magnetic spacer layer and whereinsaid insertion layer constrains B and Ni interdiffusion and blocks thecrystallization of NiFe.
 38. The GMR stack of claim 5 wherein saidferromagnetic free layer comprises the bilayer structures of CoFeB/NiFe,or CoFe/NiFe, and wherein said insertion layer of Fe or FeX is insertedadjacent to said NiFe layer to constrain Ni interdiffusion and to blockthe crystallization of NiFe, or is inserted next to the CoFeB layer toconstrain interdiffusion of the B atoms.
 39. The GMR stack of claim 6wherein said ferromagnetic free layer is formed as either of thesequential layers of CoFeB/NiFe/Fe or CoFeB/NiFe/FeX or CoFeB/FeX/NiFeor CoFeB/Fe/NiFe, whereby said insertion layer or Fe or FeX is adjacentto said electrically conducting non-magnetic spacer layer and whereinsaid insertion layer constrains B and Ni interdiffusion and blocks thecrystallization of NiFe.
 40. The GMR stack of claim 6 wherein saidferromagnetic free layer comprises the bilayer structures CoFeB/NiFe, orCoFe/NiFe, and wherein said insertion layer of Fe or FeX is insertedadjacent to said NiFe layer to constrain Ni interdiffusion and to blockthe crystallization of NiFe, or is inserted next to the CoFeB layer toconstrain interdiffusion of the B atoms.
 41. The TMR stack of claim 1formed as a sensor device.
 42. The TMR stack of claim 1 formed as anMRAM device.
 43. The TMR stack of claim 2 formed as a sensor device. 44.The TMR stack of claim 2 formed as an MRAM device.
 45. The TMR stack ofclaim 3 formed as a sensor device.
 46. The TMR stack of claim 3 formedas an MRAM device.
 47. The GMR stack of claim 4 formed as a sensordevice.
 48. The GMR stack of claim 4 formed as an MRAM device.
 49. TheGMR stack of claim 5 formed as a sensor device.
 50. The GMR stack ofclaim 5 formed as an MRAM device.
 51. The GMR stack of claim 6 formed asa sensor device.
 52. The GMR stack of claim 6 formed as an MRAM device.